The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Apr. 18, 2005
Mitsuaki Hori, Kawasaki, JP;
Mitsuaki Hori, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device is disclosed which enables to suppress decrease in the mobility in a channel region by suppressing piercing of boron through a gate insulation film which boron is ion-implanted into a gate electrode. The method for manufacturing a semiconductor device includes: a step for forming a gate insulating layer on an active region of a semiconductor substrate; a step for introducing nitrogen through the front surface of the gate insulating layer using active nitrogen; and a step for conducting an annealing treatment in an NO gas atmosphere so that the nitrogen concentration distribution in the nitrogen-introduced gate insulating layer is high on the front surface side and low on the side of the interface with the semiconductor substrate.