The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2009

Filed:

Oct. 26, 2005
Applicants:

Cay-uwe Pinnow, München, DE;

Thomas Happ, Tarrytown, NY (US);

Michael Kund, Tuntenhausen, DE;

Gerhard Mueller, München, DE;

Inventors:

Cay-Uwe Pinnow, München, DE;

Thomas Happ, Tarrytown, NY (US);

Michael Kund, Tuntenhausen, DE;

Gerhard Mueller, München, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method which makes it possible to define in a patterning layer openings having a first dimension that is substantially less than the feature size that can be obtained lithographically includes applying a sacrificial layer made of a material that is different from that of the patterning layer in a predetermined layer thickness on the patterning layer. Afterward, a photoresist layer is applied on the surface of the sacrificial layer, and an opening having a second dimension is defined lithographically in the photoresist layer. Afterward, an etching angle is set in a manner dependent on the layer thickness of the sacrificial layer and also the first and second dimensions, and the sacrificial layer is etched at the etching angle set. Afterward, the patterning layer is etched, the sacrificial layer is removed and a filling material is introduced into the opening produced in the patterning layer.


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