The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Dec. 30, 2005
Ki-chul Park, Fishkhill, NY (US);
Ja-hum Ku, LaGrangeville, NY (US);
Seung-man Choi, Fishkhill, NY (US);
Ki-Chul Park, Fishkhill, NY (US);
Ja-Hum Ku, LaGrangeville, NY (US);
Seung-Man Choi, Fishkhill, NY (US);
Samsung Electronics Co., Ltd, Suwon-Si, KR;
Abstract
Methods are provided for forming dual damascene interconnect structures using different conductor materials to fill via holes and line trenches. For example, a method for forming an interconnection structure includes depositing dielectric material on a semiconductor substrate and etching the dielectric material to form a dual damascene recess structure including a via hole and trench. A layer of first conductive material is then conformally deposited to fill the via hole with the first conductive material, and the layer of first conductive material is etched to remove the first conductive material from the trench and an upper region of the via hole below the trench. A layer of second conductive material is then deposited to fill the trench and upper region of the via hole with the second conductive material.