The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2009

Filed:

Jun. 06, 2006
Applicants:

Sun-yul Ahn, Anyang-si, KR;

Kyong-rim Kang, Seongnam-si, KR;

Tae-sung Kim, Suwon-si, KR;

Young-ho Kim, Yongin-si, KR;

Jung-hoon Lee, Hwaseong-si, KR;

Inventors:

Sun-Yul Ahn, Anyang-si, KR;

Kyong-Rim Kang, Seongnam-si, KR;

Tae-Sung Kim, Suwon-si, KR;

Young-Ho Kim, Yongin-si, KR;

Jung-Hoon Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention is directed to particular polymer compositions that may be generally characterized by the formula: wherein the variables L, M and N represent the relative molar fractions of the monomers and satisfy the expressions 0<L≦0.8; 0<M≦0.25; 0<N≦0.35; and L+M+N=1; and, wherein R, Rand Rare independently selected from C-Calkyls and derivatives thereof. The invention is also directed to polymer compositions that, when used to form a buffer layer or pattern, can be more easily removed from the surface of a semiconductor substrate, thereby increasing productivity and/or reducing the likelihood of defects and failures associated with residual photoresist material.


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