The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Jan. 18, 2008
Paul M. Moore, Foster City, CA (US);
Paul M. Moore, Foster City, CA (US);
Micrel, Inc., San Jose, CA (US);
Abstract
A method for fabricating non-volatile memory cells is provided. The method includes providing a substrate, forming a first dopant region in the substrate, forming a second dopant region in the first dopant region, growing a first isolation region over a first portion of the substrate, the first dopant region, and the second dopant region, growing a second isolation region over a second portion of the substrate, the first dopant region, and the second dopant region, defining a contact region in the second dopant region, the contact region extending between the first isolation region and the second isolation region, depositing a gate oxide layer to form a first gate dielectric atop the first isolation region and a portion of the contact region, and overlaying a gate conductive layer on top of the gate oxide layer to form a first gate conductor atop the first gate dielectric.