The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Mar. 13, 2007
Shinichi Fukada, Hamura, JP;
Hiroyuki Mitsui, Suwa, JP;
Shinichi Fukada, Hamura, JP;
Hiroyuki Mitsui, Suwa, JP;
Seiko Epson Corporation, , JP;
Abstract
A method of manufacturing a ferroelectric memory device includes: forming an active element on a substrate; forming an interlayer insulating layer on the substrate; forming an opening on the interlayer insulating layer and forming a contact plug inside the opening; forming a foundation layer above the substrate; and laminating, on the foundation layer, a first electrode, a ferroelectric layer, and a second electrode. In this method, the forming of the foundation layer includes: forming a first titanium layer having a thickness less than a depth of a recess; nitriding the first titanium layer into a first titanium nitride layer; forming a second titanium layer on the first titanium nitride layer so as to at least partially fill the recess remaining on the contact plug; nitriding the second titanium layer into a second titanium nitride layer, and polishing a surface of the second titanium nitride layer.