The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7512297 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 31, 2009

Filed:

Oct. 01, 2007
Applicant:

John Farah, Attleboro, MA (US);

Inventor:

John Farah, Attleboro, MA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); B29C 59/00 (2006.01); B29C 59/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

Polyimide substrates, and polymer laminates for optical and electronic applications are described. Single or multi-layer waveguide structures are deposited on the polyimide substrates. Laminates including polymer or a hybrid organic/inorganic waveguiding film can be deposited on a polished polyimide substrate. The laminate can also include piezoelectric and metallic layers. Micromachined optical devices, such as cantilevered waveguide are fabricated by laser ablation using a combination of IR and UV lasers. A fiber-to-waveguide coupler with a laser-machined groove for holding the fiber is also disclosed. Holes are drilled with excimer and YAG laser in the polyimide substrate and metallized to provide continuous electrical contact between both sides of the substrate. Metallized polyimide substrates are bumped and stacked to provide high density interconnects. The polyimide substrate is bonded to a semiconductor wafer. Thin SOI or epitaxially grown layer with devices is transferred to the polyimide substrate by grinding and etching the semiconductor wafer.


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