The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Jul. 17, 2007
Shinji Horii, Tenri, JP;
Satoru Yamagata, Fukuyama, JP;
Shinji Horii, Tenri, JP;
Satoru Yamagata, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The possibility of the loss of information stored in a memory cell which is caused by repeating the reading action on the same memory cell comprising a variable resistance element and a select transistor can significantly be reduced. A voltage applying circuit for selecting one or more of the memory cells from a memory cell array and applying voltages to the word lines, bit lines, and source lines for programming, erasing, and reading information applies a voltage between the bit line and the source line connected to the selected memory cell so that the voltage applied between the two ports of the variable resistance element in the selected memory cell during the reading action is equal in the polarity to one of the voltages applied between the two ports of the variable resistance element for the programming action and the erasing action respectively whichever is greater in the absolute value.