The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Oct. 22, 2007
Hideo Asano, Machida, JP;
Koji Kitamura, Kusatsu, JP;
Hisatada Miyatake, Ohtsu, JP;
Kohki Noda, Fujisawa, JP;
Toshio Sunaga, Ohtsu, JP;
Hiroshi Umezaki, Fujisawa, JP;
Hideo Asano, Machida, JP;
Koji Kitamura, Kusatsu, JP;
Hisatada Miyatake, Ohtsu, JP;
Kohki Noda, Fujisawa, JP;
Toshio Sunaga, Ohtsu, JP;
Hiroshi Umezaki, Fujisawa, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A non-volatile memory device according to one embodiment comprises a plurality of memory cells each comprising a magneto resistive element and a selection transistor; wherein at least some of the memory cells are arranged into a two dimensional array; a first interconnect line extending in a first direction of the memory array and functioning as a gate electrode of a selection transistor included in each memory cell; a second interconnect line extending in the first direction of the memory array; a third interconnect line extending in a second direction; wherein the magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines, wherein the second interconnect line extends at least partially along all magneto resistive elements in a particular one of the memory cells.