The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Mar. 06, 2007
Applicants:
Seiki Gotou, Tokyo, JP;
Akira Inoue, Tokyo, JP;
Tetsuo Kunii, Tokyo, JP;
Toshikazu Oue, Hyogo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/68 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high-frequency power amplifier has an FET element having a unit FETs in multifinger form, and having a gate pad through which a signal is input, a source pad that is grounded, and a drain pad through which a signal is output. A high-frequency processing circuit includes series resonance circuits shunt-connected between the gate pads of the unit FETs and grounding ends. Two of the series resonance circuits have respective different resonance frequencies which correspond to second and higher harmonics of a frequency included in the operating frequency band of the FET element.