The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2009

Filed:

Mar. 31, 2005
Applicants:

Hisashi Watanobe, Mie, JP;

Tooru Hara, Mie, JP;

Inventors:

Hisashi Watanobe, Mie, JP;

Tooru Hara, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate, a gate insulating film, gate electrodes, a first silicon oxide film, bit lines formed on the first silicon oxide film and including lower surfaces having respective recesses, a contact plug layer located between the gate electrodes and including a first portion, a second portion having a fourth side surface between the opposed second side surfaces of first silicon oxide film and a third portion having an upper surface and fifth side surfaces embedded in the respective recesses of the bit line, a first silicon nitride layer between a third side surface of the first portion of the contact plug and a first side surface of the gate electrode, and a second silicon oxide film. The entire upper surface and fifth side surface of the third portion of the contact plug directly contact with inner surfaces of the recesses respectively.


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