The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Feb. 24, 2006
Applicants:
Ronghua Zhu, Chandler, AZ (US);
Amitava Bose, Tempe, AZ (US);
Vishnu K. Khemka, Phoenix, AZ (US);
Todd C. Roggenbauer, Chandler, AZ (US);
Inventors:
Ronghua Zhu, Chandler, AZ (US);
Amitava Bose, Tempe, AZ (US);
Vishnu K. Khemka, Phoenix, AZ (US);
Todd C. Roggenbauer, Chandler, AZ (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A power metal-oxide-semiconductor field effect transistor (MOSFET)() incorporates a stepped drift region including a shallow trench insulator (STI)() partially overlapped by the gate () and which extends a portion of the distance to a drain region (). A silicide block extends from and partially overlaps STI () and drain region (). The STI () has a width that is approximately 50% to 75% of the drift region.