The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Nov. 14, 2005
Seiji Ogata, Chigasaki, JP;
Yuzo Sakurada, Susono, JP;
Masayuki Sekiguchi, Toshima-Ku, JP;
Tsutomu Nishihashi, Susono, JP;
Seiji Ogata, Chigasaki, JP;
Yuzo Sakurada, Susono, JP;
Masayuki Sekiguchi, Toshima-Ku, JP;
Tsutomu Nishihashi, Susono, JP;
Ulvac Co., Ltd, Chigasaki, JP;
Abstract
To provide an ion implantation device which suppresses diffusion of an ion beam, can finely control a scanning waveform and can obtain a large scanning angle of about 10°. In the ion implantation device, first, second and third chambersA,A andA are arranged in predetermined places on a beam line, first and second gapsA andA intervene between the first chamberA and the second chamberA and between the second chamberA and the third chamberA, the second chamberA is electrically insulated from the first and third chambersA andA via first and second electrode pairsA andA attached to the first and second gapsA andA, respectively, the first and second electrode pairsA andA obliquely cross a standard axis J of the ion beam at a predetermined angle in opposite directions, and the second chamberis connected to a scanning power sourceA which applies an electric potential having desired scanning waveform.