The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7510959 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 31, 2009

Filed:

Mar. 16, 2005
Applicants:

Roel Daamen, Posterholt, NL;

Viet Nguyen Hoang, Delft, NL;

Inventors:

Roel Daamen, Posterholt, NL;

Viet Nguyen Hoang, Delft, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises the steps of depositing and patterning a disposable layer, depositing a first barrier layer on top of the patterned disposable layer, depositing a metal layer, planarizing the metal layer, depositing a second barrier layer, planarizing the second barrier layer until substantially no barrier layer material is present on top of the disposable layer, depositing a permeable layer, removing the disposable layer through the permeable layer to form air gaps.


Find Patent Forward Citations

Daamen, Roel. (2009). Method of manufacturing a semiconductor device having damascene structures with air gaps (U.S. Patent No. 7510959). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7510959

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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