The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Jan. 18, 2006
Hye-soo Shin, Seoul, KR;
Hye-Soo Shin, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A single crystalline structure includes a first insulation interlayer pattern, a first epitaxial layer pattern, a second insulation interlayer pattern, and a second epitaxial layer pattern. The first insulation interlayer pattern includes a contact hole that exposes a single crystalline seed. The first epitaxial layer pattern fills up the contact hole. The second insulation interlayer pattern is formed on the first insulation interlayer pattern and the first epitaxial layer pattern. The second insulation interlayer pattern has a trench that partially exposes the first epitaxial layer pattern and has an end disposed over an upper surface of the first epitaxial layer pattern. The second epitaxial layer pattern fills up the trench. Thus, voids are not generated in the second epitaxial layer pattern and a semiconductor device having the single crystalline structure exhibits improved reliability.