The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2009

Filed:

May. 11, 2006
Applicants:

Dong-youn Shin, Daegu, KR;

Bu Gon Shin, Daejeon, KR;

Inventors:

Dong-Youn Shin, Daegu, KR;

Bu Gon Shin, Daejeon, KR;

Assignee:

LG Chem, Ltd., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

A patterning method comprising (a) providing a substrate having a sacrificial layer made of a first material, partially or totally formed on the substrate, (b) forming pattern grooves, which are free from the first material and have a line width of a first resolution or lower, on the sacrificial layer by using a first means, by which the sacrificial layer is directly processed to form a line, (c) filling the pattern grooves with a second material to a second resolution by using a second means, to form a pattern of the second material on the substrate. This method provides a high-resolution pattern with little or no waste of the second material, thereby reducing production costs. The method uses first high resolution means, such as focused energy beams of laser, combined with a low resolution means, such as ink-jet, to efficiently provide a high-resolution pattern.


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