The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Jul. 06, 2006
Fumio Takamura, Fujimino, JP;
Haruo Fukawa, Fujimino, JP;
Fumio Takamura, Fujimino, JP;
Haruo Fukawa, Fujimino, JP;
New Japan Radio Co., Ltd., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor photodetector having spectral sensitivity close to relative luminous characteristics at low cost includes steps of sealing a light receiving surface side of a semiconductor light receiving element having high spectral sensitivity in wavelengths from the visible light region to infrared region with a sealing resin, a semiconductor photodetector is made by preparing dispersion liquid by dispersing micro particles having infrared blocking characteristics not more than 100 nm in toluene, preparing a sealing resin by mixing the dispersion liquid in a transparent resin, sealing the semiconductor light receiving element with the resin, removing toluene in the sealing resin by defoaming and hardening sealing resin thereafter.