The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Mar. 23, 2006
Takashi Fukui, Chuo-ku, JP;
Kaname Ueda, Chuo-ku, JP;
Shintaro Kon, Chuo-ku, JP;
Arata Sato, Chuo-ku, JP;
Akira Sato, Chuo-ku, JP;
Takashi Fukui, Chuo-ku, JP;
Kaname Ueda, Chuo-ku, JP;
Shintaro Kon, Chuo-ku, JP;
Arata Sato, Chuo-ku, JP;
Akira Sato, Chuo-ku, JP;
TDK Corporation, Tokyo, JP;
Abstract
A method of production of a multilayer ceramic electronic device having dielectric layers with an interlayer thickness of 5 μm or less and internal electrode layers including a base metal, including the steps of firing, then annealing a stack comprised of a dielectric layer paste and an internal electrode layer paste including a base metal alternately arranged in 100 layers or more under a reducing atmosphere, treating the annealed stack by first heat treatment under a strong reducing atmosphere of an oxygen partial pressure Pof over 2.9×10Pa to less than 6.7×10Pa at a holding temperature Tof over 300° C. to less than 600° C. The stack after the first heat treatment is treated by second heat treatment under an atmosphere of an oxygen partial pressure Pof over 1.9×10Pa to less than 4.1×10Pa at a holding temperature Tof over 500° C. to less than 1000° C.