The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Aug. 02, 2006
Takashi Yamada, Yokohama, JP;
Takashi Yamada, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A semiconductor optical device comprises a first conductive type III-V compound semiconductor layer, a second conductive type III-V compound semiconductor layer, and an active region. The first conductive type III-V compound semiconductor layer is provided on a substrate. The second conductive type III-V compound semiconductor layer is provided on the substrate. The active region is provided between the first conductive type III-V compound semiconductor layer and the second conductive type III-V compound semiconductor layer. The active region includes a III-V compound semiconductor layer. The III-V compound semiconductor layer contains nitrogen and arsenic as V-group element. The hydrogen concentration of the III-V compound semiconductor layer is greater than 6×10cm. The III-V compound semiconductor layer of the active region is doped with n-type dopant.