The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Sep. 08, 2005
Min-ching Hsu, Taipei, TW;
MO Yung-lung, Taipei, TW;
Min-Ching Hsu, Taipei, TW;
Mo Yung-lung, Taipei, TW;
Chunghwa Picture Tubes, Ltd., Taipei, TW;
Abstract
A thin film transistor including a gate, a gate insulator layer, a channel layer, a source, a drain, and an ohmic contact layer is provided. The gate insulator layer covers the gate; the channel layer is disposed on the gate insulator layer above the gate; the source and the drain are disposed on the channel layer; the ohmic contact layer is disposed between the channel layer and the source and drain. The ohmic contact layer is constituted of a plurality of film layers. As mentioned above, the thin film transistor has an ohmic contact layer constituted by a plurality of film layers. When the thin film transistor is turned off, the current leakage thereof is lowered than that of conventional thin film transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile