The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Oct. 26, 2006
Chih-lung Hung, Hsinchu, TW;
Chih-Lung Hung, Hsinchu, TW;
Episil Technologies Inc., Hsinchu, TW;
Abstract
A non-volatile memory is provided, including a control gate, a floating gate, a gate oxide layer, a source region, a drain region, a first dielectric layer, a second dielectric layer, and an erase gate. The control gate is disposed in a substrate. The floating gate comprising a coupling part and a gate part is disposed over the control gate and located over a portion of the substrate with the gate oxide layer there-between. The source region adjoins with one side of the gate part, while the drain region adjoins with the other side of the gate part. The first dielectric layer is disposed on the floating gate. The second dielectric layer is disposed on the sidewalls of the floating gate. The erase gate is disposed over the coupling part of the floating gate and covers the first dielectric layer and the second dielectric layer.