The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Aug. 16, 2007
Gregory E Howard, Dallas, TX (US);
Leland Swanson, McKinney, TX (US);
Gregory E Howard, Dallas, TX (US);
Leland Swanson, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present, invention provides a system for providing a cross-lateral junction field effect transistor () having desired high-performance desired voltage, frequency or current characteristics. The cross-lateral transistor is formed on a commercial semiconductor substrate (). A channel structure () is formed along the substrate, having source () and drain () structures laterally formed on opposites sides thereof. A first gate structure () is formed along the substrate, laterally adjoining the channel structure orthogonal to the source and drain structures. A second gate structure () is formed along the substrate, laterally adjoining the channel structure, orthogonal to the source and drain structures and opposite the first gate structure.