The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Jun. 17, 2005
Tetsuzo Ueda, Toyonaka, JP;
Masaaki Yuri, Ibaraki, JP;
Tetsuzo Ueda, Toyonaka, JP;
Masaaki Yuri, Ibaraki, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The present invention aims to provide a long-lived semiconductor laser device with low threshold current and available for high-output operation in a blue-violet semiconductor laser device using a nitride semiconductor layer. In the semiconductor laser device, the following layers are sequentially formed on a GaN substrate: an n-type GaN layer; an n-type AlGaN cladding layer, a first n-type GaN guiding layer; and a p-type AlGaN blocking layer(current-blocking layer), further a striped opening is formed on a portion of the p-type AlGaN blocking layer, a second n-type GaN guiding layeris formed to cover the opening, and the following layers are sequentially formed on the second n-type GaN guiding layer: an InGaN multiple quantum well active layer; an undoped GaN guiding layer; a p-type AlGaN electron overflow suppression layer, a p-type AlGaN cladding layer, and a p-type GaN contact layer