The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Jan. 22, 2007
Bum-ki Baek, Suwon, KR;
Mun-pyo Hong, Seongnam, KR;
Jang-soo Kim, Suwon, KR;
Sung-wook Hao, Seoul, KR;
Jong-soo Yoon, Cheonan, KR;
Doug-gyu Kim, Suwon, KR;
Bum-Ki Baek, Suwon, KR;
Mun-Pyo Hong, Seongnam, KR;
Jang-Soo Kim, Suwon, KR;
Sung-Wook Hao, Seoul, KR;
Jong-Soo Yoon, Cheonan, KR;
Doug-Gyu Kim, Suwon, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A conductive layer, including a lower layer made of refractory metal such as chromium, molybdenum, and molybdenum alloy and an upper layer made of aluminum or aluminum alloy, is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode on a substrate. At this time, the upper layer of the gate pad is removed using a photoresist pattern having different thicknesses depending on position as etch mask. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially formed. A conductive material is deposited and patterned to form a data wire including a data line, a source electrode, a drain electrode, and a data pad.