The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Jan. 02, 2007
Stephen W. Bedell, Wappingers Falls, NY (US);
Huajie Chen, Wappingers Falls, NY (US);
Anthony G. Domenicucci, New Paltz, NY (US);
Keith E. Fogel, Mohegan Lake, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Huajie Chen, Wappingers Falls, NY (US);
Anthony G. Domenicucci, New Paltz, NY (US);
Keith E. Fogel, Mohegan Lake, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A heterostructure is provided which includes a substantially relaxed SiGe layer present atop an insulating region that is located on a substrate. The substantially relaxed SiGe layer has a thickness of from about 2000 nm or less, a measured lattice relaxation of from about 50 to about 80% and a defect density of less than about 10defects/cm. A strained epitaxial Si layer is located atop the substantially relaxed SiGe layer and at least one alternating stack including a bottom relaxed SiGe layer and an top strained Si layer located on the strained epitaxial Si layer.