The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2009

Filed:

Mar. 25, 2005
Applicants:

Norifumi Fujimura, Osaka, JP;

Ryoma Hayakawa, Osaka, JP;

Hiroya Kitahata, Chiba, JP;

Tsuyoshi Uehara, Ibaraki, JP;

Takuya Yara, Osaka, JP;

Inventors:

Norifumi Fujimura, Osaka, JP;

Ryoma Hayakawa, Osaka, JP;

Hiroya Kitahata, Chiba, JP;

Tsuyoshi Uehara, Ibaraki, JP;

Takuya Yara, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

Uniform oxynitride and nitride films can be formed by low-temperature and high-speed nitriding reaction not dependent on the nitriding time or nitriding temperature. A solid dielectric is provided on at least one of opposed surfaces of a pair of electrodes opposed to each other under a pressure of 300 (Torr) or higher, a nitrogen gas containing an oxide equal to or lower than 0.2% is introduced into a space between the pair of opposed electrodes, an electric field is applied to the nitrogen gas, and the resulting N(2p.s.) or N(H.I.R) active species is brought into contact with an object to be processed to form an oxynitride film/nitride film on a surface of the object to be processed.


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