The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7507662 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 24, 2009

Filed:

Aug. 31, 2006
Applicant:

Shinichi Fukada, Hamura, JP;

Inventor:

Shinichi Fukada, Hamura, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A ferroelectric memory includes a substrate, an interlayer dielectric layer composed of at least one layer formed above the substrate, a plurality of ferroelectric capacitors formed above the interlayer dielectric layer, a coating layer that covers the plurality of ferroelectric capacitors, a first opening section provided between the plurality of ferroelectric capacitors, a second opening section that is connected to the first opening section and formed in the coating layer and the interlayer dielectric layer, and a conductive layer provided in one piece inside the first opening section and the second opening section.


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Fukada, Shinichi. (2009). Ferroelectric memory and its manufacturing method (U.S. Patent No. 7507662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7507662

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