The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Jun. 09, 2005
Cheol-hwi Ryu, Kyoungki-do, KR;
Jong-han Shin, Kyoungki-do, KR;
Cheol-Hwi Ryu, Kyoungki-do, KR;
Jong-Han Shin, Kyoungki-do, KR;
Hynix Semiconductor, Inc., , KR;
Abstract
Disclosed is a method for fabricating a plurality of storage node contacts in a semiconductor device capable of minimizing an influence of a slurry residue and planarizing cruspidal patterns caused during a storage node contact isolation process. In accordance with the present invention, a chemical mechanical polishing (CMP) process that is the last process of the storage node contact isolation process is performed by using the slurry without the selectivity or the reverse selectivity, thereby removing the plurality of cruspidal patterns at every interface of the plurality of bit line patterns BL and the plurality of storage node contacts.