The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Mar. 14, 2007
Applicants:
Seong-hwee Cheong, Seoul, KR;
Sang-woo Lee, Seoul, KR;
Jin-ho Park, Gyeonggi-do, KR;
Seung-gil Yang, Gyeonggi-do, KR;
Brad H. Lee, Gyeonggi-do, KR;
Inventors:
Seong-Hwee Cheong, Seoul, KR;
Sang-Woo Lee, Seoul, KR;
Jin-Ho Park, Gyeonggi-do, KR;
Seung-Gil Yang, Gyeonggi-do, KR;
Brad H. Lee, Gyeonggi-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
In one embodiment, a nonvolatile memory device can be fabricated by forming first metallic dots on a charge storage film using first source gas, forming substitution dots on the charge storage film on which the first metallic dots are formed and forming second metallic dots using a second source gas.