The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Jan. 03, 2006
Applicant:
Jirou Miura, Kawasaki, JP;
Inventor:
Jirou Miura, Kawasaki, JP;
Assignee:
Fujitsu Microelectronics Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a method of manufacturing a semiconductor device including the steps of: forming a first insulating film on a silicon substrate; forming a capacitor in which a lower electrode, a capacitor dielectric film configured of ferroelectric material, and an upper electrode are laminated in this order on the first insulating film; forming a silicon nitride film by a catalytic CVD method as a first capacitor protect insulating film covering the capacitor and the first insulating film; and forming a second insulating film on the first capacitor protect insulating film.