The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Aug. 01, 2007
Tomoji Kawai, Suita, JP;
Masateru Taniguchi, Suita, JP;
Eriko Mizuno, Suita, JP;
Ikuo Fukui, Joetsu, JP;
Tomoji Kawai, Suita, JP;
Masateru Taniguchi, Suita, JP;
Eriko Mizuno, Suita, JP;
Ikuo Fukui, Joetsu, JP;
Osaka University, Suita-Shi, Osaka, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.