The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Dec. 08, 2005
Richard Francis, Manhattan Beach, CA (US);
Chiu NG, El Segundo, CA (US);
Hamilton LU, Los Angeles, CA (US);
Ranadeep Dutta, Redondo Beach, CA (US);
Richard Francis, Manhattan Beach, CA (US);
Chiu Ng, El Segundo, CA (US);
Hamilton Lu, Los Angeles, CA (US);
Ranadeep Dutta, Redondo Beach, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
The collector or anode of a non-punch through IGBT formed in a float zone silicon wafer is formed by a P doped amorphous silicon layer deposited on the back surface of an ultra thin wafer. A DMOS structure is formed on the top surface of the wafer before the bottom structure is formed. A back contact is formed over the amorphous silicon layer. No alloy step is needed to activate the anode defined by the P type amorphous silicon.