The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2009
Filed:
Jun. 30, 2003
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Masashi Yoshimura, Suita, JP;
Fumio Kawamura, Suita, JP;
Kunimichi Omae, Suita, JP;
Tomoya Iwahashi, Osaka, JP;
Masanori Morishita, Suita, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Masashi Yoshimura, Suita, JP;
Fumio Kawamura, Suita, JP;
Kunimichi Omae, Suita, JP;
Tomoya Iwahashi, Osaka, JP;
Masanori Morishita, Suita, JP;
Osaka Industrial Promotion Organization, Osaka, JP;
Abstract
A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.