The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2009

Filed:

Mar. 28, 2006
Applicants:

Takayuki Kashima, Okayama-ken, JP;

Kouji Makita, Hyogo-ken, JP;

Kenji Yoshikawa, Okayama-ken, JP;

Inventors:

Takayuki Kashima, Okayama-ken, JP;

Kouji Makita, Hyogo-ken, JP;

Kenji Yoshikawa, Okayama-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a monolithic dual-laser semiconductor laser device capable of high power output, a window structure for each of laser elements is formed through a common step, thereby improving the device reliability. The semiconductor laser device has an infrared laser element liand a red laser elementmonolithically integrated on an n-type semiconductor substrate i. Each of the infrared and red laser elementsandhas a ridged waveguide and a window structure formed by Zn diffusion at each resonator facet. The infrared and red laser elements iiandinclude p-type contact layersandon the ridges of the respective waveguides. The p-type contact layeris thinner than the p-type contact layer


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