The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Sep. 29, 2006
Reinhard Losehand, Munich, DE;
Reinhard Losehand, Munich, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A high-frequency switching device comprises a connecting region having a first conductivity type, and a first barrier region bordering on the connecting region and having a second conductivity type. A semiconductor region border on the first barrier region and has a dopant concentration which is lower than a dopant concentration of the first barrier region or equal to zero. A second barrier region borders on the first semiconductor region and has the first conductivity type. A base region borders on the second barrier region and has the second conductivity type. A third barrier region borders on the semiconductor region and has the second conductivity type and a higher dopant concentration than the semiconductor region. An emitter region borders on the third barrier region and has the first conductivity type. A fourth barrier region borders on the semiconductor region and has the second conductivity type and a higher dopant concentration than the semiconductor region. A collector region borders on the fourth barrier region and has the first conductivity type.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile