The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2009

Filed:

Jan. 17, 2006
Applicant:

Takeshi Yoshida, Yokohama, JP;

Inventor:

Takeshi Yoshida, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor integrated circuit device includes a semiconductor substrate having a first surface. First wells of first conductive type are formed on the semiconductor substrate. Second wells of second conductive type are formed on the semiconductor substrate. The first wells surround each of the second wells on the first surface. The second wells surround each of the first wells on the first surface. One of the first wells and one of the second wells which are adjacent to each other compose a well pair. An inverter pair is composed of a first inverter and a second inverter. An input and an output of the first inverter are electrically connected to an output and an input of the second inverter respectively. Transistors composing the inverter pair are formed in the well pair.


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