The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
May. 25, 2005
Yannick Martelloni, Poing, DE;
Thomas Nirschl, München, DE;
Bernhard Wicht, München, DE;
Infineon Technologies AG, Munich, DE;
Abstract
An SRAM memory cell has at least one memory node and at least one selection transistor, which is electrically connected to the memory node, a first bit line and a first word line. Furthermore, the SRAM memory cell has means for compensating for a leakage current flowing into the SRAM memory cell. The means are designed in such a way that a current corresponding to the leakage current flows into the SRAM memory cell. In one exemplary embodiment, the means are formed as a transistor which is electrically connected to the first bit line and the second memory node, the first memory node being connected to the selection transistor.