The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Sep. 07, 2006
Huai-yuan Tseng, Taoyuan County, TW;
Chen-pang Kung, Taoyuan County, TW;
Horng-chih Lin, Hsinchu, TW;
Ming-hsien Lee, Kaohsiung, TW;
Huai-Yuan Tseng, Taoyuan County, TW;
Chen-Pang Kung, Taoyuan County, TW;
Horng-Chih Lin, Hsinchu, TW;
Ming-Hsien Lee, Kaohsiung, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A structure of semiconductor device including an insulation substrate is provided. A channel layer is disposed on the insulation substrate. A plurality of doped layers is disposed on the insulation substrate, and protrudes from the channel layer. The doped layers form at least two source/drain electrode (S/D electrode) pairs, and each of the S/D electrode pairs has a different extension direction with respect to the channel layer. A gate dielectric layer is disposed on the channel layer. A gate layer is disposed on the gate dielectric layer. Preferably, for example, the extension direction of at least one of the S/D electrode pairs is a first direction, and the extension direction of at least another one of the S/D electrode pairs is a second direction.