The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2009

Filed:

Jul. 28, 2005
Applicant:

Youn-sub Lim, Chungcheongbuk-do, KR;

Inventor:

Youn-Sub Lim, Chungcheongbuk-do, KR;

Assignee:

MagnaChip Semiconductor, Ltd., Chungcheonbuk-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2006.01);
U.S. Cl.
CPC ...
Abstract

A complementary metal oxide semiconductor (CMOS) image sensor capable of improving photosensitivity and a signal to noise ratio and a method for fabricating the same are provided. An image sensor for embodying the colors of red, green and blue includes: a plurality of photodiodes formed on a substrate and collecting light incident to different unit pixels; a silicon oxide layer formed on the plurality of photodiodes; a silicon nitride layer formed on the silicon oxide layer, wherein the silicon nitride layer is formed in a single layer in unit pixels of green and blue and split into two layers on an upper portion of the unit pixel of red; and a plurality of microlenses formed on portions of the silicon nitride layer corresponding to the respective photodiodes.


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