The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Dec. 21, 2006
Applicants:
Cheol MO Jeong, Icheon-si, KR;
Whee Won Cho, Cheongju-si, KR;
Eun Soo Kim, Incheon, KR;
Seung Hee Hong, Seoul, KR;
Inventors:
Cheol Mo Jeong, Icheon-si, KR;
Whee Won Cho, Cheongju-si, KR;
Eun Soo Kim, Incheon, KR;
Seung Hee Hong, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a conductive structure (e.g., bit line) of a semiconductor device includes forming a barrier metal layer on a semiconductor substrate in which structures are formed. An amorphous titanium carbon nitride layer is formed on the barrier metal layer. A tungsten seed layer is formed on the amorphous titanium carbon nitride layer under an atmosphere including a boron gas. A tungsten layer is formed on the tungsten seed layer, thus forming a bit line.