The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Feb. 21, 2006
Applicants:
Yoon-ho Khang, Yongin-si, KR;
Kyo-yeol Lee, Yongin-si, KR;
Eun-hye Lee, Seoul, KR;
Joo-hyun Lee, Seoul, KR;
Inventors:
Yoon-ho Khang, Yongin-si, KR;
Kyo-yeol Lee, Yongin-si, KR;
Eun-hye Lee, Seoul, KR;
Joo-hyun Lee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a nonvolatile memory device and a method of manufacturing the same. The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate formed of a fullerene material on the tunneling oxide, a blocking oxide film formed on the floating gate, and a gate electrode formed on the blocking oxide film.