The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2009

Filed:

Mar. 13, 2007
Applicants:

Kwansuhk OH, San Jose, CA (US);

Raymond C. Pang, San Jose, CA (US);

Hsung Jai Im, Cupertino, CA (US);

Sunhom Paak, San Jose, CA (US);

Inventors:

Kwansuhk Oh, San Jose, CA (US);

Raymond C. Pang, San Jose, CA (US);

Hsung Jai Im, Cupertino, CA (US);

Sunhom Paak, San Jose, CA (US);

Assignee:

Xilinx, Inc., San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/18 (2006.01); H01H 85/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An eFuse sensing circuit replaces the inverters used to provide the 'read' output state of a conventional eFuse circuit. The sensing circuit includes a comparator with one input coupled to the eFuse circuitry, and a second input coupled to a reference voltage generator circuit. The reference voltage generator circuit includes an internal resistor. Transistors of the sense circuit are provided to mimic the transistors of the eFuse circuit, so that variations of transistors due to process, voltage and temperature will be substantially the same. The resistor of the sense circuit is then effectively compared with the resistance of the eFuse by the comparator irrespective of temperature and process variations.


Find Patent Forward Citations

Loading…