The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Feb. 05, 2005
Tae Kyung Yoo, Kyunggi-do, KR;
Eun Hyun Park, Kyunggi-do, KR;
Tae Kyung Yoo, Kyunggi-do, KR;
Eun Hyun Park, Kyunggi-do, KR;
Epivalley Co., Ltd., Koomi, KR;
Abstract
The present invention provides a III-nitride compound semiconductor light emitting device comprising an active layer () which emits light and is interposed between a lower contact layer () made of n-GaN and an upper contact layer () made of p-GaN, in which a sequential stack of a lattice mismatch-reducing layer Lmade of InGaN, an electron supply layer Lmade of n-GaN or n-AlGaN and a crystal restoration layer Lmade of InGaN is interposed between the lower contact layer and the active layer, and further comprising an electron acceleration layer Lmade of n-GaN or undoped GaN and a heterojunction electron barrier-removing layer L, thereby the lattice mismatch between the lower contact layer () and the active layer () can be reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile