The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Dec. 19, 2006
Jong Taek Hwang, Cheongju-si, KR;
Jong Taek Hwang, Cheongju-si, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method for forming an isolation layer of a semiconductor device using a shallow trench isolation method is provided. The method includes: vertically etching a region of an insulating layer and a part of a semiconductor substrate corresponding thereto to form a trench; depositing an oxide layer on an entire surface of the semiconductor substrate to fill the trench; plasma-sputtering at least a surface part of the oxide layer; and removing the oxide layer using chemical mechanical polishing (CMP) so that the oxide layer remains only in the trench. The method may remove sharp parts of the oxide layer and reduce or prevent the occurrence of scratches during the CMP process.