The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Oct. 18, 2007
Yasuyoshi Takai, Kawasaki, JP;
Hiroshi Shimoda, Ebina, JP;
Shotaro Okabe, Utsunomiya, JP;
Koichi Matsuda, Kawasaki, JP;
Hidetoshi Tsuzuki, Kawasaki, JP;
Yasuyoshi Takai, Kawasaki, JP;
Hiroshi Shimoda, Ebina, JP;
Shotaro Okabe, Utsunomiya, JP;
Koichi Matsuda, Kawasaki, JP;
Hidetoshi Tsuzuki, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.