The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Dec. 22, 2005
Ying-che Tseng, Taipei Hsien, TW;
Nean-chu Cheng, Taipei Hsien, TW;
Ying-Che Tseng, Taipei Hsien, TW;
Nean-Chu Cheng, Taipei Hsien, TW;
Via Technologies, Inc., Hsin Tien, Taipei Hsien, TW;
Abstract
A mixer of a homodyne RF receiver made from a CMOS process is provided. The mixer comprises a gain stage, a switch stage and a load stage. The gain stage receives a differential-typed RF signal and generating a first gained signal. The switch stage mixes the first gained signal and a LO signal to direct down-convert into a modulated signal. The load stage comprises a first transistor, an impedance element and a second transistor. The first transistor provides a low impedance to permit the modulated signal entering the load stage. The second transistor provides a high impedance to resist signals. The load stage converts the modulated signal to a second gained signal according to a first gain coefficient of the impedance element. The first transistor is a parallel pnp BJT, and the second transistor is a vertical npn bipolar BJT.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile