The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2009

Filed:

Sep. 06, 2007
Applicants:

Hyun-jin Kim, Suwon-si, KR;

Ho-young Song, Hwaseong-si, KR;

Youn-sik Park, Yongin-si, KR;

Seong-jin Jang, Seongnam-si, KR;

Inventors:

Hyun-jin Kim, Suwon-si, KR;

Ho-young Song, Hwaseong-si, KR;

Youn-sik Park, Yongin-si, KR;

Seong-jin Jang, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A synchronous semiconductor memory device includes an output control signal generator, which generates an output control signal corresponding to a signal obtained by delaying a read information signal in response to a delay internal clock signal obtained by dividing an internal clock signal by n, first and second sampling signals obtained by delaying the internal clock signal, a first output control clock signal obtained by dividing the internal clock signal by n, and a column address strobe (CAS) latency signal. The synchronous semiconductor memory device also includes a data output buffer, which outputs data by buffering internal data in response to the output control signal and the first output control clock signal.


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