The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Nov. 08, 2005
Theodore W. Houston, Richardson, TX (US);
Xiaowei Deng, Plano, TX (US);
Tito Gelsomini, Plano, TX (US);
Theodore W. Houston, Richardson, TX (US);
Xiaowei Deng, Plano, TX (US);
Tito Gelsomini, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for testing an electrical property of one or more functionally separate transistors located within an active region that is common with other transistors, a method for characterizing the leakage current of at least one of a plurality of functionally separate transistors located in a common active region of a circuit, and a test structure for testing one or more functionally separate transistors located within a common active region. The method for testing the electrical property, among other steps, includes providing a pair of functionally separate transistors () located within a common active region, and biasing a terminal () between the pair () relative to gates () of the pair () and terminals () outlying the pair () to obtain a leakage current associated with the pair ().