The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Nov. 03, 2006
Daisuke Oda, Tokyo, JP;
Daisuke Oda, Tokyo, JP;
Oki Semiconductor Co., Ltd., , JP;
Abstract
A memory cell array circuit of a non-volatile memory selects the drain electrodes of the memory cells, interconnected to word lines and bit lines, by two drain selectors, adapted for selecting the drain electrodes in two selection routes, so that the memory cell array circuit will select the drain electrodes in four selection routes. In writing in the memory cells, the drain electrodes of the memory cells are selected at a rate of one out of four drain electrodes and the voltage CDV is applied to the so selected drain electrode. This decreases the potential difference between the drain and source electrodes of the non-selected memory cells to prevent the erroneous writing in the non-selected memory cells. A method for writing in the memory is also provided.