The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Apr. 26, 2004
Shanjen Pan, Plano, TX (US);
Sameer Pendharkar, Richardson, TX (US);
James R. Todd, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides, in one embodiment, a transistor (). The transistor () comprises a doped semiconductor substrate () and a gate structure () over the semiconductor substrate (), the gate structure () having a gate corner (). The transistor () also includes a drain-extended well () surrounded by the doped semiconductor substrate (). The drain-extended well () has an opposite dopant type as the doped semiconductor substrate (). The drain-extended well () also has a low-doped region () between high-doped regions (), wherein an edge of the low-doped region () is substantially coincident with a perimeter () defined by the gate corner (). Other embodiments of the present invention include a method of manufacturing a transistor () and an integrated circuit ().